Magnetotransport of p-type GaMnN assisted by highly conductive precipitates

被引：84
作者：
Kim, KH
Lee, KJ
Kim, DJ [1 ]
Kim, HJ
Ihm, YE
Djayaprawira, D
Takahashi, M
Kim, CS
Kim, CG
Yoo, SH
机构：
[1] Chungnam Natl Univ, Dept Mat Engn, Taejon 305764, South Korea
[2] Tohoku Univ, Dept Elect Engn, Sendai, Miyagi 9808579, Japan
[3] Korea Res Inst Stand & Sci, Mat Evaluat Ctr, Taejon 305606, South Korea
[4] Korea Res Inst Chem Technol, Taejon 305600, South Korea
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 11期
关键词：
D O I：
10.1063/1.1561580
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
GaMnN growth on GaAs (100) using a GaN single precursor via molecular beam epitaxy was undertaken. The grown layers revealed p-type conduction. It is confirmed that p-GaMnN reveals room temperature ferromagnetism with hysteresis loop having a coercivity of similar to100 Oe. The segregated phase showing a transition temperature of similar to200 K is assigned to Mn3GaN, and which enhances the conductivity of the surrounding GaMnN region. As a consequence, the GaMnN layer with segregation revealed an anomalous Hall effect at room temperature proving magnetotransport in GaMnN phase. The enhanced conductivity of GaMnN by the highly conductive second phase also revealed the importance of the role of the free carriers in the carrier-mediated ferromagnetism. (C) 2003 American Institute of Physics.
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页码：1775 / 1777
页数：3
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