Materials Selection Approaches and Fabrication Methods in RF MEMS Switches

A state of the art review on Radio Frequency Micro-Electromechanical Systems (RF MEMS) capacitive switches is reported by considering two key aspects: (1) materials selection approaches for improving performance, and (2) fabrication methods used in capacitive MEMS switches. The beam and dielectric materials used in capacitive MEMS switches and the performance achieved through them are reviewed and reported by a rigorous literature survey. Further, materials selection approaches for the beam membrane and the dielectric layer are discussed using Ashby's methodology, and other associated methods based on it, which uses material indices to evaluate the performance of a switch. Performance indicators for the beam materials selection are the pull-in voltage, RF loss, thermal residual stress, contact resistance, thermal conductivity, and maximum displacement, whereas the hold-down voltage, dielectric charging, leakage current, heat dissipation, capacitance ratio, and stability are performance indicators in dielectric materials selection. MEMS switch fabrication can be achieved through bulk micromachining processes and surface micromachining processes, but the surface micromachining process has been preferred over the last few decades. The fabricated MEMS switch components can be integrated using a monolithic complementary metal oxide semiconductor-micro-electromechanical systems (CMOS-MEMS) process for the realization of applications in sensors, resonators, amplifiers, phase shifters, and MEMS satellite vehicles for space applications. CMOS-MEMS monolithic fabrication is discussed further with the help of fabrication process involved and the process technology. The TSMC-CMOS 0.35 mu m technology is one of the leading technologies in CMOS-MEMS fabrication and is mainly used.