A two-dimensional array of single-hole quantum dots

被引:30
|
作者
van Riggelen, F. [1 ]
Hendrickx, N. W. [1 ]
Lawrie, W. I. L. [1 ]
Russ, M. [1 ]
Sammak, A. [2 ]
Scappucci, G. [1 ]
Veldhorst, M. [1 ]
机构
[1] Delft Univ Technol, QuTech & Kavli Inst Nanosci, Lorentzweg 1, NL-2628 CJ Delft, Netherlands
[2] QuTech & Netherlands Org Appl Sci Res TNO, Stieltjesweg 1, NL-2628 CK Delft, Netherlands
关键词
SILICON; SPIN;
D O I
10.1063/5.0037330
中图分类号
O59 [应用物理学];
学科分类号
摘要
Quantum dots fabricated using methods compatible with semiconductor manufacturing are promising for quantum information processing. In order to fully utilize the potential of this platform, scaling quantum dot arrays along two dimensions is a key step. Here, we demonstrate a two-dimensional quantum dot array where each quantum dot is tuned to single-charge occupancy, verified by simultaneous measurements using two integrated radio frequency charge sensors. We achieve this by using planar germanium quantum dots with low disorder and a small effective mass, allowing the incorporation of dedicated barrier gates to control the coupling of the quantum dots. We measure the hole charge filling spectrum and show that we can tune single-hole quantum dots from isolated quantum dots to strongly exchange coupled quantum dots. These results motivate the use of planar germanium quantum dots as building blocks for quantum simulation and computation.
引用
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页数:6
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