Normally-off operation power AlGaN/GaN HFET

被引：0

作者：

Ikeda, N ^{[1
]}

Li, J ^{[1
]}

Yoshida, S ^{[1
]}

机构：

[1] Furukawa Elect Corp Ltd, Yokohama R&D Labs, Nishi Ku, Yokohama, Kanagawa 220073, Japan

来源：

ISPSD '04: PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS | 2004年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the novel normally-off GaN-based heterojunction field effect transistors (HFETs). The AlGaN/AIN/GaN heterostructure on Si (111) substrate was grown using a metalorganic chemical vapor deposition (MOCVD). The HFET for a normally-off operation was fabricated using the AlGaN/C-GaN heterostructure. As a result, the HFET was operated at the condition of the positive gate bias. The breakdown voltage of FET was about 350 V. We also confirmed that the normally-off HFET was operated at 573 K. A normally-off operation using GaN based HFETs on the silicon substrate was thus confirmed for the first time.

引用

页码：369 / 372

页数：4

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