Study of amorphous to microcrystalline silicon transition from argon diluted silane

被引：0

作者：

Gupta, ND ^{[1
]}

Ray, PP ^{[1
]}

Chaudhuri, P ^{[1
]}

Das, UK ^{[1
]}

Vignoli, S ^{[1
]}

Jardin, C ^{[1
]}

机构：

[1] Indian Assoc Cultivat Sci, Kolkata 700032, W Bengal, India

来源：

AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002 | 2002年 / 715卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied the structural evolution in amorphous and microcrystalline silicon deposited from silane-argon mixture by radio frequency plasma enhanced chemical vapour deposition (PECVD) method. Sharp increase in small angle x-ray scattering (SAXS) intensity, in accordance with tilt measurements, indicates columnar morphology in the sample deposited in the amorphous-microcrystalline transition region. The variation of SAXS measured heterogeneity and a gradual shift of Si-H stretching vibrational frequency at 2000 cm(-1) towards higher wave number with increase of power density indicate structural modifications in the films. Observation of sharp increase in the ratio of the intensity of Ar-* to SiH* in the transition region may explain the surface modification assisted by Ar-* and hence the structural changes in the material.

引用

页码：61 / 66

页数：6

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