Nonpolar m- and a-plane GaN thin films grown on γ-LiAlO2 substrates

被引：6

作者：

Zou, Jun ^{[1
,2
]}

Xiang, Weidong ^{[1
]}

机构：

[1] Wenzhou Univ, Wenzhou 325035, Zhejiang, Peoples R China

[2] Zhejiang Gemcore Technol Co Ltd, Hangzhou 32501, Zhejiang, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 12期

关键词：

Optical properties; MOCVD; LiAlO2; GaN layer; CHEMICAL-VAPOR-DEPOSITION; MULTIPLE-QUANTUM WELLS; LIGHT-EMITTING-DIODES; SAPPHIRE; EPITAXY; QUALITY; LIALO2; ALN;

D O I：

10.1016/j.jcrysgro.2009.03.015

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Pure single-phase m- and a-plane GaN layers were fabricated on (1 0 0)- and (3 0 2)-planes of gamma-LiAlO2 (LAO) substrate via metelorganic vapor deposition, respectively. Raman spectra measurement indicates that the crystallinity gradually improves with increasing layer thickness, and smaller stress exists in an a-GaN film. (3 0 2)-Plane LAO appears suitable for fabricating high-quality a-GaN layers because the layer on it shows a smoother surface with the root mean square of 60 nm, higher transmittance (85%) and narrower full-width at half-maximum value (FWHM) of X-ray rocking curve (1123 arcsec) than m-GaN on (1 0 0)-plane LAO (1735 arcsec). Published by Elsevier B.V.

引用

页码：3285 / 3288

页数：4

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