Energy transfer between amorphous Si nanoclusters and Er3+ ions in a SiO2 matrix

被引：37
|
作者：
Navarro-Urrios, D. [1 ,3 ]
Pitanti, A. [1 ]
Daldosso, N. [1 ]
Gourbilleau, F. [2 ]
Rizk, R. [2 ]
Garrido, B. [3 ]
Pavesi, L. [1 ]
机构：
[1] Univ Trent, Lab Nanosci, Dipartimento Fis, I-38100 Trento, Italy
[2] CEA, CIMAP, CNRS 6252, UMR, F-14050 Caen, France
[3] Univ Barcelona, Dept Elect, MIND IN2UB, E-08028 Barcelona, CAT, Spain
来源：
PHYSICAL REVIEW B | 2009年 / 79卷 / 19期
关键词：
amorphous state; atomic clusters; elemental semiconductors; erbium; excited states; nanostructured materials; positive ions; silicon; OPTICAL-PROPERTIES; POROUS SILICON; LUMINESCENCE;
D O I：
10.1103/PhysRevB.79.193312
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the energy-transfer mechanism between amorphous Si nanoclusters and erbium ions in a SiO2 matrix. We have studied a set of optimized samples which show maximum Er3+ to Si-nc coupling ratio. We demonstrate that the transfer mainly occurs to the I-4(11/2) level in less than 100 ns and that higher Er3+ energetic levels are not involved. Furthermore, we show that there are no traces of Auger back-transfer, excited state absorption, or pair-induced quenching mechanisms in our samples, leading us to propose a model in which the short interaction distance between Si-nc and Er3+ ions is the limiting factor for the noncomplete excitation of the whole Er3+ active population.
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页数：4
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