First principles calculations of the dark current in quantum well infrared photodetectors

被引：18

作者：

Etteh, NEI ^{[1
]}

Harrison, P ^{[1
]}

机构：

[1] Univ Leeds, IMP, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

dark current; interface roughness; QWIP; sequential tunnelling;

D O I：

10.1016/S1386-9477(01)00563-X

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A first principles model of the dark current in quantum well infrared photodetectors has been derived using a quantum mechanical approach. This is based on a combined representation of the field-induced and thermionic emission components of the dark current. It is argued that the contribution of sequential tunnelling to the dark current is affected significantly by the presence of interface roughness found in real devices. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：381 / 384

页数：4

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