Temperature and pressure effect on GaN waveguide at 428.71 terahertz frequency for sensing application

Effect of temperature and pressure on gallium nitride semiconductor (GaN) waveguide at terahertz frequency is thoroughly discussed in this paper. This effect acts as both temperature and pressure sensor using same waveguide. Temperature as well as pressure of GaN is investigated at wavelength 700 nm. Both reflection and absorption losses of GaN waveguide are considered to compute transmitted energy. Reflectance from such structure is simulated using plane wave simulation method. Simulation results revealed that reflectance varies linearly with respect to both temperature and pressure. It is also found that absorption of GaN is zero at wavelength 700 nm. Experimentally, set up is designed to obtain transmitted energy emerging from GaN waveguide with respect to different temperature and pressure. Finally, simulation result showed that transmitted energy through such structure varies an excellently linearship with both temperature and pressure which acts as accurate temperature and pressure sensor. (C) 2015 Elsevier GmbH. All rights reserved.