Nanocathodoluminescence Reveals Mitigation of the Stark Shift in InGaN Quantum Wells by Si Doping

被引：29

作者：

Griffiths, James T. ^{[1
]}

Zhang, Siyuan ^{[1
]}

Rouet-Leduc, Bertrand ^{[1
]}

Fu, Wai Yuen ^{[1
]}

Bao, An ^{[1
]}

Zhu, Dandan ^{[1
,2
]}

Wallis, David J. ^{[1
,2
]}

Howkins, Ashley ^{[3
]}

Boyd, Ian ^{[3
]}

Stowe, David ^{[4
]}

Kappers, Menno J. ^{[1
]}

Humphreys, Colin J. ^{[1
]}

Oliver, Rachel A. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England

[2] Plessey Semicond, Plymouth PL6 7BQ, Devon, England

[3] Brunel Univ, Expt Tech Ctr, Uxbridge UB8 3PH, Middx, England

[4] Gatan UK, Abingdon OX14 1RL, Oxon, England

来源：

NANO LETTERS | 2015年 / 15卷 / 11期

基金：

欧洲研究理事会; 英国工程与自然科学研究理事会;

关键词：

Nanocathodoluminescence; scanning transmission electron microscopy; InGaN optoelectronics; light emitting diodes; quantum confined Stark effect; silicon doping; OPTICAL-PROPERTIES; DIFFUSION LENGTH; EFFICIENCY; SPECTRA;

D O I：

10.1021/acs.nanolett.5b03531

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Nanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices.

引用

页码：7639 / 7643

页数：5

共 35 条

[1] High luminescent efficiency of InGaN multiple quantum wells grown on InGaN underlying layers [J].

Akasaka, T ;

Gotoh, H ;

Saito, T ;

Makimoto, T .

APPLIED PHYSICS LETTERS, 2004, 85 (15) :3089-3091

[2]

[Anonymous], MAT SCI TECHNOLOGY

[3]

[Anonymous], PHYS REV B

[4] Spatially resolved cathodoluminescence spectra of InGaN quantum wells [J].

Chichibu, S ;

Wada, K ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1997, 71 (16) :2346-2348

[5] Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells [J].

Cho, YH ;

Song, JJ ;

Keller, S ;

Minsky, MS ;

Hu, E ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1128-1130

[6] EFFICIENT BAND-STRUCTURE CALCULATIONS OF STRAINED QUANTUM-WELLS [J].

CHUANG, SL .

PHYSICAL REVIEW B, 1991, 43 (12) :9649-9661

[7] Optical properties of doped InGaN GaN multiquantum-well structures [J].

Dalfors, J ;

Bergman, JP ;

Holtz, PO ;

Sernelius, BE ;

Monemar, B ;

Amano, H ;

Akasaki, I .

APPLIED PHYSICS LETTERS, 1999, 74 (22) :3299-3301

[8] A study of the inclusion of prelayers in InGaN/GaN single- and multiple-quantum-well structures [J].

Davies, Matthew J. ;

Dawson, Philip ;

Massabuau, Fabien C. -P. ;

Le Fol, Adrian ;

Oliver, Rachel A. ;

Kappers, Menno J. ;

Humphreys, Colin J. .

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2015, 252 (05) :866-872

[9] Luminescence spectra from InGaN multiquantum wells heavily doped with Si [J].

Deguchi, T ;

Shikanai, A ;

Torii, K ;

Sota, T ;

Chichibu, S ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1998, 72 (25) :3329-3331

[10] Diffusion length of photoexcited carriers in GaN [J].

Duboz, JY ;

Binet, F ;

Dolfi, D ;

Laurent, N ;

Scholz, F ;

Off, J ;

Sohmer, A ;

Briot, O ;

Gil, B .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 50 (1-3) :289-295

← 1 2 3 4 →