Physical models for smart-power devices

被引：1

作者：

Rudan, M. ^{[1
]}

Reggiani, S. ^{[1
]}

Gnani, E. ^{[1
]}

Baccarani, G. ^{[1
]}

Corvasce, C. ^{[2
]}

Ciappa, M. ^{[2
]}

Stecher, M. ^{[3
]}

Pogany, D. ^{[4
]}

Gornik, E. ^{[4
]}

机构：

[1] Univ Bologna, ARCES, Bologna, Italy

[2] ETH Zentrum, IIS, Zurich, Switzerland

[3] Infineon Technol AG, Munich, Germany

[4] Vienna Univ Technol, ISSE, Vienna, Austria

来源：

PROCEEDINGS OF THE INTERNATIONAL CONFERENCE MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS | 2006年

关键词：

electrostatic-discharge (EDS) events; high-temperature device characterization; impact-ionization; Hall-voltage measurements;

D O I：

10.1109/MIXDES.2006.1706531

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A careful prediction of the carrier mobility and impact-ionization generation is essential for the design of devices working in high-current/voltage conditions, where self-heating is relevant. Recently, some of the Authors presented new physically-based models for both mobility and impact ionization, which have been validated up to very high operating temperatures. Such work is based on theoretical analyses, that confimed both the numerical and experimental findings about the field and temperature dependencies. The availability of such models provides the background for the realization of predictive simulation tools for power and electrostatic-discharge protection devices.

引用

页码：28 / +

页数：2

共 24 条

[1]

AG ISE, 2002, ISE TCAD REL 8 5 ISE

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