Windowed growth of AlGaN/GaN heterostructures on Silicon ⟨111⟩ substrates for future MOS integration

被引：6

作者：

Chyurlia, P. ^{[1
]}

Semond, F. ^{[2
]}

Lester, T. ^{[3
]}

Bardwell, J. A. ^{[3
]}

Rolfe, S. ^{[3
]}

Cordier, Y. ^{[2
]}

Baron, N. ^{[2
]}

Moreno, J. -C. ^{[2
]}

Tarr, N. G. ^{[1
]}

机构：

[1] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada

[2] CNRS, CRHEA, F-06560 Valbonne, France

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2009年 / 206卷 / 02期

关键词：

SI(111);

D O I：

10.1002/pssa.200824452

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A novel windowed growth technique that allows for the exposure of a smooth silicon surface for MOS circuitry between AlGaN/GaN HEMT layers has been developed. A sacrificial oxide based dielectric stack is used to protect regions of the silicon surface before growth by ammonia-MBE. SIMS analysis shows elevated oxygen impurity incorporation in the stress-relief layer, but controllable levels in the C-doped GaN buffer. A Hall mobility of 1.37 x 10(3) cm(2)/Vs is measured in the AlGaN/GaN regions. AFM results show a RMS roughness of 0.12 nm on the silicon surface. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：371 / 374

页数：4

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