Room temperature unpassivated InAs p-i-n photodetectors grown by molecular beam epitaxy

被引：30

作者：

Lin, RM ^{[1
]}

Tang, SF ^{[1
]}

Lee, SC ^{[1
]}

Kuan, CH ^{[1
]}

Chen, GS ^{[1
]}

Sun, TP ^{[1
]}

Wu, JC ^{[1
]}

机构：

[1] CHUNG SHAN INST SCI & TECHNOL,MAT RES & DEV CTR,LUNGTAN,TAIWAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 02期

关键词：

D O I：

10.1109/16.557708

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An unpassivated InAs p-i-n photodetector with excellent performance at room temperature was demonstrated, The zero-bias resistance area products of the diode with 720-nm thick i-layer are 8.1 Omega-cm(2) at room temperature and as high as 1.3 M Omega-cm(2) at 77 K, At 77 K, the diode exhibits a breakdown voltage exceeding 13 V, When tested under a 500 K blackbody source, the measured detectivity limited by Johnson noise is 1.2 x 10(10) cm-Hz(1/2)/W at room temperature and 8.1 x 10(11) cm-Hz(1/2)/W at 77 K, To our knowledge, this is the best data for a room temperature infrared detector.

引用

页码：209 / 213

页数：5

共 10 条

[1] BULK TUNNELING CONTRIBUTION TO THE REVERSE BREAKDOWN CHARACTERISTICS OF INSB GATE CONTROLLED DIODES [J].

ADAR, R ;

NEMIROVSKY, Y ;

KIDRON, I .

SOLID-STATE ELECTRONICS, 1987, 30 (12) :1289-1293

[2]

BAILEY CG, 1987, APPL PHYS LETT, V51, P1431

[3] INAS P-N DIODES GROWN ON GAAS AND GAAS-COATED SI BY MOLECULAR-BEAM EPITAXY [J].

DOBBELAERE, W ;

DEBOECK, J ;

HEREMANS, P ;

MERTENS, R ;

BORGHS, G ;

LUYTEN, W ;

VANLANDUYT, J .

APPLIED PHYSICS LETTERS, 1992, 60 (07) :868-870

[4] MONOLITHIC INTEGRATION OF INAS PHOTODIODE AND GAAS-MESFET [J].

DOBBELAERE, W ;

DERAEDT, W ;

DEBOECK, J ;

MERTENS, R ;

BORGHS, G .

ELECTRONICS LETTERS, 1992, 28 (04) :372-374

[5] ROOM-TEMPERATURE INASXSBYP1-X-Y LIGHT-EMITTING-DIODES FOR CO2 DETECTION AT 4.2-MU-M [J].

KRIER, A .

APPLIED PHYSICS LETTERS, 1990, 56 (24) :2428-2429

[6]

MANIV S, 1987, SPIE, V819, P103

[7] FIELD-INDUCED TUNNEL-DIODE IN INDIUM-ANTIMONIDE [J].

MARGALIT, S ;

SHAPPIR, J ;

KIDRON, I .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3999-4001

[8] GATE-CONTROLLED HG1-XCDX TE PHOTODIODES PASSIVATED WITH NATIVE SULFIDES [J].

NEMIROVSKY, Y ;

ADAR, R ;

KORNFELD, A ;

KIDRON, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1986, 4 (04) :1986-1991

[9] ROOM-TEMPERATURE CD-DIFFUSED INASSBP DIODES FOR METHANE GAS-DETECTION [J].

PARRY, MK ;

KRIER, A .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (09) :1764-1769

[10] EFFICIENT 3.3-MU-M LIGHT-EMITTING-DIODES FOR DETECTING METHANE GAS AT ROOM-TEMPERATURE [J].

PARRY, MK ;

KRIER, A .

ELECTRONICS LETTERS, 1994, 30 (23) :1968-1969

← 1 →