Ultra-wideband CMOS low noise amplifier with Flat Gain

被引：2

作者：

Elahi, Seyed Hassan ^{[1
]}

Nabavi, Abdolreza ^{[1
]}

机构：

[1] Tarbiat Modares Univ, Microelect Lab, Tehran 14115111, Iran

来源：

IEICE ELECTRONICS EXPRESS | 2009年 / 6卷 / 10期

关键词：

LNA; flatness; noise figure; notch; shunt-feedback topology;

D O I：

10.1587/elex.6.630

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes using notch filters for improving the gain and gain flatness of an UWB CMOS LNA designed with a 0.13 mu m CMOS technology. Also, the performance of LNA is examined by replacing the passive inductances in notch filters with Q-enhanced cascade-grounded active inductors to decrease the silicon area. Simulation results illustrate that both passive and active notch filters at 2.4 GHz approximately improves the gain flatness by 0.75 dB, while the gain performance with passive notch is about 2 dB better. In addition, passive notch filters at 2.9 GHz, in parallel with a passive and active notch at 5.2 GHz for interference reduction, increases the gain by 3 dB and 4 dB, respectively.

引用

页码：630 / 637

页数：8