Charge carrier kinetics in GeSi/Si quantum dots probed by mid-infrared radiation

被引：1

作者：

Sofronov, A. N. ^{[1
]}

Vorobjev, L. E. ^{[1
]}

Firsov, D. A. ^{[1
]}

Balagula, R. M. ^{[1
]}

Tonkikh, A. A. ^{[2
,3
]}

机构：

[1] Peter Great St Petersburg Polytech Univ, Polytech Skaya 29, St Petersburg 195251, Russia

[2] Scia Syst GmbH, Annaberger Str 240, Chemnitz, Germany

[3] RAS, Inst Phys Microstruct, GSP 105, Nizhnii Novgorod 603950, Russia

来源：

33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2017年 / 864卷

关键词：

D O I：

10.1088/1742-6596/864/1/012069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mid-infrared photo-induced absorption relaxation kinetics of the self-assembled array of GeSi quantum dots in Si matrix was studied in the conditions of short pulsed interband optical excitation. The measured absorption decay curves directly show the temporal evolution of the population of the QD ground states. The analysis of the experimental data allowed us to estimate characteristic recombination and capture times, and the electron localization energy in the vicinity of QD.

引用

页数：4

共 6 条

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