Visible Light Response of Unintentionally Doped ZnO Nanowire Field Effect Transistors

被引：32

作者：

Liu, Yang ^{[1
,2
]}

Zhang, Zhiyong ^{[1
,2
]}

Xu, Huilong ^{[1
,2
]}

Zhang, Lihuan ^{[1
,2
]}

Wang, Zhenxing ^{[1
,2
]}

Li, Wenliang ^{[1
,2
]}

Ding, Li ^{[1
,2
]}

Hu, Youfan ^{[1
,2
]}

Gao, Min ^{[1
,2
]}

Li, Quan ^{[3
]}

Peng, Lian-Mao ^{[1
,2
]}

机构：

[1] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China

[2] Peking Univ, Dept Elect, Beijing 100871, Peoples R China

[3] Chinese Univ Hong Kong, Dept Phys, Shatin, Hong Kong, Peoples R China

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2009年 / 113卷 / 38期

基金：

美国国家科学基金会;

关键词：

PHOTODETECTORS;

D O I：

10.1021/jp9046038

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A significant visible light response of unintentionally doped ZnO nanowire (NW) field effect transistors (FETs) has been observed in a reversible manner (for illumination source on and off). In particular, under white light illumination (wavelength longer than 400 nm), the threshold voltage (V-T) of the ZnO NW FET shifts greatly to the negative direction, suggesting a remarkable increase in carrier concentration. A photon-assisted oxygen molecule desorption mechanism is proposed to explain the observed sub-bandgap photoresponse on the basis of the behavior of the experimental devices in different gas atmospheres (air, vacuum, pure N-2, and pure O-2) and with/without nanowire surface modifications (coated with PMMA).

引用

页码：16796 / 16801

页数：6

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