Quantum dot superlattice thermoelectric materials and devices

被引：2228

作者：

Harman, TC ^{[1
]}

Taylor, PJ ^{[1
]}

Walsh, MP ^{[1
]}

LaForge, BE ^{[1
]}

机构：

[1] MIT, Lincoln Lab, Lexington, MA 02420 USA

来源：

SCIENCE | 2002年 / 297卷 / 5590期

关键词：

D O I：

10.1126/science.1072886

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

PbSeTe-based quantum dot superlattice structures grown by molecular beam epitaxy have been investigated for applications in thermoelectrics. We demonstrate improved cooling values relative to the conventional bulk (Bi,Sb)(2)(Se,Te)(3) thermoelectric materials using a n-type film in a one-leg thermoelectric device test setup, which cooled the cold junction 43.7 K below the room temperature hot junction temperature of 299.7 K. The typical device consists of a substrate-free, bulk-like ( typically 0.1 millimeter in thickness, 10 millimeters in width, and 5 millimeters in length) slab of nanostructured PbSeTe/PbTe as the n-type leg and a metal wire as the p-type leg.

引用

页码：2229 / 2232

页数：4

共 12 条

[1]

DRESSELHAUS MS, 2001, RECENT TRENDS THERMO, V71, pCH1

[2]

Harman T. C., 1999, Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407), P280, DOI 10.1109/ICT.1999.843386

[3] SPECIAL TECHNIQUES FOR MEASUREMENT OF THERMOELECTRIC PROPERTIES [J].