Dielectric behavior related to TiOx phase change to TiO2 in TiOx/Al2O3 nanolaminate thin films

被引：5
|
作者：
Lee, Geunhee [1 ,2 ]
Katiyar, Ram S. [2 ]
Lai, Bo-Kuai [3 ]
Phatak, Charudatta [4 ]
Auciello, Orlando [1 ]
机构：
[1] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA
[2] Univ Puerto Rico, Inst Funct Nanomat, San Juan, PR 00931 USA
[3] Lake Shore Cryotron, Westerville, OH 43082 USA
[4] Argonne Natl Lab, Div Mat Sci, Argonne, IL 60439 USA
来源：
MRS COMMUNICATIONS | 2014年 / 4卷 / 02期
基金：
美国国家科学基金会;
关键词：
TITANIUM-DIOXIDE; GROWTH;
D O I：
10.1557/mrc.2014.14
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We previously demonstrated that TiOx/Al2O3 nanolaminates (TAO NL) exhibit abnormally high-dielectric constant k (800-1000), due to Maxwell-Wagner polarization, via charge accumulation at insulating Al2O3/semiconducting TiOx interfaces. Here, we report TAO NL dielectric properties related to TiOx phase change in TiOx (0.9 nm)/Al2O3 (0.1 nm) NL. High-resolution transmission electron microscopy shows amorphous TiOx phase change to crystalline anatase TiO2 due to free-energy minimization. The phase change induce reduction in leakage current and dielectric loss (J = 10(-2) to 10(-4) A/cm(2), tan delta = 10 to 10(-1)), still with k similar to 600 up to MHz, compared to amorphous TAO NLs.
引用
收藏
页码：67 / 72
页数：6
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