Electrical and optical behavior of Al2O3/Porous silicon/silicon structures

被引：2

作者：

Gabouze, N. ^{[1
]}

Ait-hamouda, K. ^{[1
]}

机构：

[1] Unite Dev Technol Silicium, Algiers, Algeria

来源：

THIN FILMS AND POROUS MATERIALS | 2009年 / 609卷

关键词：

Alumina; Porous silicon; Photodetector; Optical filter; Spectral sensitivity; FILMS; FILTERS;

D O I：

10.4028/www.scientific.net/MSF.609.213

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, a promising class of optical filters is introduced, based on Al2O3/PS/Si structure. The filters consist of thin layer of aluminium electrochemically oxidized in different aqueous solution, on porous silicon. The spectral sensitivity can be easily varied by Al2O3 thickness. This result is a consequence of refractive index variation of Al2O3 and PS layers, confirmed by ellipsometry measurements.

引用

页码：213 / 219

页数：7

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