Electrical and optical behavior of Al2O3/Porous silicon/silicon structures

被引:2
作者
Gabouze, N. [1 ]
Ait-hamouda, K. [1 ]
机构
[1] Unite Dev Technol Silicium, Algiers, Algeria
来源
THIN FILMS AND POROUS MATERIALS | 2009年 / 609卷
关键词
Alumina; Porous silicon; Photodetector; Optical filter; Spectral sensitivity; FILMS; FILTERS;
D O I
10.4028/www.scientific.net/MSF.609.213
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, a promising class of optical filters is introduced, based on Al2O3/PS/Si structure. The filters consist of thin layer of aluminium electrochemically oxidized in different aqueous solution, on porous silicon. The spectral sensitivity can be easily varied by Al2O3 thickness. This result is a consequence of refractive index variation of Al2O3 and PS layers, confirmed by ellipsometry measurements.
引用
收藏
页码:213 / 219
页数:7
相关论文
共 50 条
[21]   Interfacial Area between Hetero-Epitaxial -Al2O3 and Silicon [J].
Liao, Yuanxun ;
Zhou, Dongyi ;
Shrestha, Santosh ;
Huang, Shujuan ;
Bremner, Stephen ;
Conibeer, Gavin .
ADVANCED MATERIALS INTERFACES, 2017, 4 (17)
[22]   The passivation of Al2O3 and its applications in the crystalline silicon solar cell [J].
Zhang Xiang ;
Liu Bang-Wu ;
Xia Yang ;
Li Chao-Bo ;
Liu Jie ;
Shen Ze-Nan .
ACTA PHYSICA SINICA, 2012, 61 (18)
[23]   Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates [J].
Campabadal, F. ;
Rafi, J. M. ;
Zabala, M. ;
Beldarrain, O. ;
Faigon, A. ;
Castan, H. ;
Gomez, A. ;
Garcia, H. ;
Duenas, S. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2011, 29 (01)
[24]   Enhancement the Electrical Properties of Porous Silicon for Photodetectors Applications by depositing Bi2O3 nanoparticles [J].
Nayef, Uday M. ;
Kamel, Reham I. .
OPTIK, 2020, 207
[25]   Porous silicon based structures for the electrical biosensing of glucose [J].
Lopez-Garcia, J. ;
Martin-Palma, R. J. ;
Manso, M. ;
Martinez-Duart, J. M. .
SENSORS AND ACTUATORS B-CHEMICAL, 2007, 126 (01) :82-85
[26]   Interfacial and electrical characterization of HfO2/Al2O3/InAlAs structures [J].
Wu, Li-fan ;
Zhang, Yu-ming ;
Lu, Hong-liang ;
Zhang, Yi-men .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (11)
[27]   Electrical behavior of double-sided metal/porous silicon structures for optoelectronic devices [J].
Martín-Palma, RJ ;
Martínez-Duart, JM ;
Li, L ;
Levy, RA .
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 19 (1-2) :359-362
[28]   Electrical Characterization of Defects in Al2O3 [J].
Schmid, A. ;
Kerstena, F. ;
Rentrop, S. ;
Abendroth, B. ;
Meyer, D. C. ;
Heitmann, J. .
DIELECTRICS FOR NANOSYSTEMS 6: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING, 2014, 61 (02) :11-20
[29]   Influence of polarized bias and porous silicon morphology on the electrical behavior of Au-porous silicon contacts [J].
赵岳 ;
李东升 ;
邢守祥 ;
杨德仁 ;
蒋民华 .
Journal of Zhejiang University Science, 2005, (11) :93-98
[30]   Influence of polarized bias and porous silicon morphology on the electrical behavior of Au-porous silicon contacts [J].
Zhao Y. ;
Li D.-S. ;
Xing S.-X. ;
Yang D.-R. ;
Jiang M.-H. .
Journal of Zhejiang University: Science, 2005, 6 B (11) :1135-1140