Improved design technique of a microwave class-E power amplifier with finite switching-on resistance

被引：16

作者：

Wang, C ^{[1
]}

Larson, LE ^{[1
]}

Asbeck, PM ^{[1
]}

机构：

[1] Univ Calif San Diego, Ctr Wireless Commun, La Jolla, CA 92093 USA

来源：

RAWCON 2002: IEEE RADIO AND WIRELESS CONFERENCE, PROCEEDINGS | 2002年

关键词：

D O I：

10.1109/RAWCON.2002.1030162

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

The class-E amplifier is a highly efficient amplifier for microwave power applications. Due to the complexity involved, previous analytical efforts assumed either zero switch resistance and/or infinite drain (collector) inductance, which resulted in less than optimum designs. In this paper, we take the effect of both the finite switching-on resistance and finite drain inductance into account, and present an improved and optimized design technique. A 1.9GHz CMOS class-E power amplifier, which can deliver 0.25W of output power, was analyzed as an example of this new design technique. Excellent agreement between the theoretical analysis and simulation results is reported, pointing the way towards the optimized design of the class-E stage for microwave applications.

引用

页码：241 / 244

页数：4

共 8 条

[1]

Ewing G. D., 1964, THESIS

[2]

LARSON LE, 1998, J VAC SCI TECHNOL B, P1541

[3]

LI CH, 1994, IEEE P CIRCUITS DEVI, P174

[4]

MERTENS K, 2002, IEEE J SOLID STA FEB, P137

[5]

RAAB FH, 1978, IEEE J SOLID STA APR, P239

[6] CLASS-E - NEW CLASS OF HIGH-EFFICIENCY TUNED SINGLE-ENDED SWITCHING POWER AMPLIFIERS [J].

SOKAL, NO ;

SOKAL, AD .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1975, SC10 (03) :168-176

[7] A 1.9-GHz, 1-W CMOS class-E power amplifier for wireless communications [J].

Tsai, KC ;

Gray, PR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1999, 34 (07) :962-970

[8] A common-gate switched 0.9-W class-E power amplifier with 41% PAE in 0.25-μm CMOS [J].

Yoo, C ;

Huang, QT .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2001, 36 (05) :823-830

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