Fabrication of La1-xSrxGa1-yMgyO3-(x+y)/2 thin films by electrophoretic deposition and its conductivity measurement

被引：48

作者：

Mathews, T ^{[1
]}

Rabu, N ^{[1
]}

Sellar, JR ^{[1
]}

Muddle, BC ^{[1
]}

机构：

[1] Monash Univ, Dept Mat Engn, Clayton, Vic 3168, Australia

来源：

SOLID STATE IONICS | 2000年 / 128卷 / 1-4期

关键词：

thin film; electrophoretic deposition; doped lanthanum gallate; ionic conductivity; solid oxide fuel cells;

D O I：

10.1016/S0167-2738(99)00308-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thin films of La1-xSrxGa1-yMgyO3-(x+y)/2 were prepared by the electrophoretic deposition technique using acetone-containing iodine (750 mg I-1) as solvent medium. Between each deposition sintering was performed for 1 h duration at various temperatures, of 100 degrees intervals, in the range 1273-1673 K. At temperatures below 1673 K, the deposited films did not sinter well and were porous. Dense films with uniform thickness of 4 mu m were obtained after five repetitions of deposition and sintering at 1673 K. The ionic conductivity of the film was measured using an ac impedance bridge. The conductivity of the films is comparable with that of bulk samples. (C) 2000 Elsevier Science B.V; All rights reserved.

引用

页码：111 / 115

页数：5

共 12 条

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