Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer

As a future-generation source/drain contact structure, NiSi films were formed on a strained and epitaxial Si:P layer (P concentration of similar to 1.9 at.%), and their unique microstructural properties were characterized as a function of the annealing temperature (400-800 C-omicron). Unlike the NiSi film formed on Si, those formed on the strained Si:P consisted of many abnormally large grains with a rather uniform thickness and flat-bottom interface, most likely because of the strain effect caused by the underlying Si:P layer. The strain energy built at the NiSi/Si:P interface is believed to have significantly affected the microstructure and morphology of the subsequently grown NiSi film, which eventually led to retardation of thermal agglomeration.(C) 2016 Elsevier B.V. All rights reserved.