Size-dependent effective Young's modulus of silicon nitride cantilevers

被引：138
|
作者：
Gavan, Khashayar Babaei [1 ]
Westra, Hidde J. R. [1 ]
van der Drift, Emile W. J. M. [1 ]
Venstra, Warner J. [1 ]
van der Zant, Herre S. J. [1 ]
机构：
[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands
来源：
APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 23期
关键词：
bending strength; cantilevers; elasticity; silicon compounds; thermal noise; Young's modulus; SURFACE STRESS; FORCE MICROSCOPE; FREQUENCY; FILMS;
D O I：
10.1063/1.3152772
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effective Young's modulus of silicon nitride cantilevers is determined for thicknesses in the range of 20-684 nm by measuring resonance frequencies from thermal noise spectra. A significant deviation from the bulk value is observed for cantilevers thinner than 150 nm. To explain the observations we have compared the thickness dependence of the effective Young's modulus for the first and second flexural resonance mode and measured the static curvature profiles of the cantilevers. We conclude that surface stress cannot explain the observed behavior. A surface elasticity model fits the experimental data consistently.
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页数：3
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