Correlation of threading screw dislocation density to GaN 2-DEG mobility

被引：12

作者：

Hite, J. K. ^{[1
]}

Gaddipati, P. ^{[2
]}

Meyer, D. J. ^{[1
]}

Mastro, M. A. ^{[1
]}

Eddy, C. R., Jr. ^{[1
]}

机构：

[1] US Naval Res Lab, Washington, DC 20375 USA

[2] Amer Soc Engn Educ, Sci & Engn Apprenticeship Program, Washington, DC 20036 USA

来源：

ELECTRONICS LETTERS | 2014年 / 50卷 / 23期

关键词：

microwave oscillators; LC circuits; low-voltage quadrature LC oscillator; quadrature inductor-capacitor oscillator; phase ambiguity problem; figure-of-merit; FoM; start-up performance; frequency; 5; GHz;

D O I：

10.1049/el.2014.2401

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A direct correlation between local threading screw dislocation densities in an aluminium gallium nitride/gallium nitride (AlGaN/GaN) heterostructure and the mobility of electrons in the two-dimensional electron gas (2-DEG) formed at the interface of that heterostructure is presented. Threading screw dislocations are directly imaged through open areas of Hall-effect test structures using electron channelling contrast imaging. The dislocation density measured for a given test structure is correlated to the mobility of the same structure. The results show a direct, negative correlation between mobility and screw/mixed dislocation density.

引用

页码：1722 / 1723

页数：2

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