Microstructural and electrical properties of Ga2O3 nanowires grown at various temperatures by vapor-liquid-solid technique

被引：45

作者：

Cuong, Nguyen Duy ^{[1
]}

Park, Yeon Woong ^{[1
]}

Yoon, Soon Gil ^{[1
]}

机构：

[1] Chungnam Natl Univ, Sch Nano Sci & Technol, Taejon 305764, South Korea

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2009年 / 140卷 / 01期

关键词：

Gallium oxide; Nanowires; Gas sensor; GAS SENSOR APPLICATIONS; THIN-FILMS; BETA-GA2O3; NANOWIRES; PHOTOLUMINESCENCE; DEVICES; METAL;

D O I：

10.1016/j.snb.2009.04.020

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

Gallium oxide (Ga2O3) nanowires were grown at various temperatures by vapor-liquid-solid method on Au-nanodots prepared at 500 degrees C on SiO2/Si substrates. The average size of Au-nanodots was approximately 20 nm. The optimum conditions for the growth of nanowires were in the temperature range of 700-900 degrees C. The diameter and the length of nanowires grown from 700 to 900 degrees C are 10-40 min and several micrometers, respectively. The samples grown at 950 degrees C exhibit the various shapes of nanobelts and nanosheets including nanowires. On the other hand, Ga2O3 nanowires were not formed at 1000 degrees C. The nanowires grown at 900 degrees C were beta-Ga2O3 with a crystal structure of single crystal. For applications of H-2 gas sensor, the response values of Ga2O3 nanowires grown at 900 degrees C are quite high and the response time is in the range of 48-52 s. However, gas sensing properties should be more analyzed. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：240 / 244

页数：5

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