Millimeter- and Submillimeter-Wave Monolithic Integrated Circuits Based on Metamorphic HEMT Technology for Sensors and Communication

被引：2

作者：

Schlechtweg, Michael ^{[1
]}

Tessmann, Axel ^{[1
]}

Leuther, Arnulf ^{[1
]}

Massler, Hermann ^{[1
]}

Wagner, Sandrine ^{[1
]}

Aidam, Rolf ^{[1
]}

Rosenzweig, Josef ^{[1
]}

Ambacher, Oliver ^{[1
]}

Kallfass, Ingmar ^{[2
]}

Lewark, Ulrich J. ^{[2
]}

Sommer, Rainer ^{[3
]}

Wahlen, Alfred ^{[3
]}

Stanko, Stephan ^{[3
]}

Ender, Joachim ^{[3
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany

[2] KIT, Inst Hochfrequenztech & Elektronik, D-76131 Karlsruhe, Germany

[3] Fraunhofer Inst High Phys & Radar Techniques FHR, D-53343 Wachtberg, Germany

来源：

2013 IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, COMMUNICATIONS, ANTENNAS AND ELECTRONICS SYSTEMS (IEEE COMCAS 2013) | 2013年

关键词：

metamorphic high electron mobility transistor (mHEMT); millimeter-wave monolithic integrated circuit (MMIC); submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier; mixer; multiplier; radar;

D O I：

10.1109/COMCAS.2013.6685251

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the next generation of sensors and communication systems operating at frequencies up to 600 GHz and above, the Fraunhofer IAF is developing a broad variety of millimeter- and submillimeter-wave monolithic integrated circuits (MMICs and S-MMICs) and modules. The monolithic integrated circuits are realized using the advanced metamorphic high electron mobility transistor (mHEMT) technology in the InGaAs/InAlAs material system on 4 '' GaAs substrates. This paper presents a 600 GHz amplifier S-MMIC and a chip set of MMICs developed for a 300 GHz radar.

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页数：4

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