Stable Al2O3 Encapsulation of MoS2-FETs Enabled by CVD Grown h-BN

被引：21

作者：

Piacentini, Agata ^{[1
,2
]}

Marian, Damiano ^{[3
]}

Schneider, Daniel S. ^{[1
,2
]}

Marin, Enrique Gonzalez ^{[4
]}

Wang, Zhenyu ^{[5
]}

Otto, Martin ^{[1
]}

Canto, Barbara ^{[1
,6
]}

Radenovic, Aleksandra ^{[7
]}

Kis, Andras ^{[5
]}

Fiori, Gianluca ^{[3
]}

Lemme, Max C. ^{[1
,2
]}

Neumaier, Daniel ^{[1
,6
]}

机构：

[1] AMO GmbH, Adv Microelect Ctr Aachen AMICA, Otto Blumenthal Str 25, D-52074 Aachen, Germany

[2] Rhein Westfal TH Aachen, Chair Elect Devices, Otto Blumenthal Str 2, D-52074 Aachen, Germany

[3] Univ Pisa, Dipartimento Ingn Informaz, Via Girolamo Caruso 16, I-56122 Pisa, Italy

[4] Univ Granada, Dept Elect & Comp Technol, Ave Fuente Nueva S-N, Granada 18071, Spain

[5] Ecole Polytech Fed Lausanne EPFL, Elect Engn Inst, CH-1015 Lausanne, Switzerland

[6] Berg Univ Wuppertal, Sch Elect Informat & Media Engn, Lise Meitner Str 13, D-42119 Wuppertal, Germany

[7] Ecole Polytech Fed Lausanne EPFL, Intitute Biotechnol, CH-1015 Lausanne, Switzerland

来源：

ADVANCED ELECTRONIC MATERIALS | 2022年 / 8卷 / 09期

关键词：

Al; O-2; (3); fixed charges; h-BN encapsulation; hysteresis in MoS; (2)-based devices; MoS; (2) transistors; HEXAGONAL BORON-NITRIDE; MONOLAYER MOS2; PHOTOLUMINESCENCE; TRANSISTORS; HYSTERESIS; RAMAN;

D O I：

10.1002/aelm.202200123

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Molybdenum disulfide (MoS2) has great potential as a two-dimensional semiconductor for electronic and optoelectronic application, but its high sensitivity to environmental adsorbents and charge transfer from neighboring dielectrics can lead to device variability and instability. Aluminum oxide (Al2O3) is widely used as an encapsulation layer in (opto)-electronics, but it leads to detrimental charge transfer n-doping to MoS2. Here, this work reports a scalable encapsulation approach for MoS2 field-effect transistors (FETs) where hexagonal boron nitride (h-BN) monolayers are employed as a barrier layer in-between each of the Al2O3 and MoS2 interfaces. These devices exhibit a significant reduction of charge transfer, when compared to structures without h-BN. This benefit of h-BN in the gate stack is confirmed by ab initio density functional theory calculations. In addition, the devices with h-BN layers show very low hysteresis even under ambient operating conditions.

引用

页数：9

共 56 条

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