Conduction and valence band edge properties of hexagonal InN characterized by optical measurements

被引：20

作者：

Ishitani, Y. ^{[1
,2
,3
]}

Terashima, W. ^{[1
,3
]}

Che, S. B. ^{[1
,2
,3
]}

Yoshikawa, A. ^{[1
,2
,3
]}

机构：

[1] Chiba Univ, Dept Elect & Mech Engn, 1-8-1 Inohana, Chiba, Japan

[2] Chiba Univ, Ctr Frontier Electron & Photon, 1-8-1 Inohana, Chiba, Japan

[3] InN Project CREST Prog JST, Chiba 2368522, Japan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6 | 2006年 / 3卷 / 06期

关键词：

D O I：

10.1002/pssc.200565386

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The optical properties of hexagonal InN crystal are investigated by reflectance, absorption and photoluminescence method. With use of the theoretical formula of these spectra, both of conduction and valence band properties are analysed. As a result, the average effective electron and hole mass values at the band edge are found to be about 0.046(+/- 0.01)m(0) and 0.2(+/- 0.05)m(0), respectively. The photoluminescence emitted from the cleaved edge was strongly polarized. The agreement of the peak energies of pi and sigma polarized light means that A, B, and C band edges are closely located in energy space. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1850 / 1853

页数：4

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