Effect of Sintering Temperature on the Dielectric Properties of Non-stoichiometric Nickel Oxide

被引：0

作者：

Dubey, Paras ^{[1
]}

Choudhary, K. K. ^{[2
]}

Singh, Kiran ^{[3
,4
]}

Kaurav, Netram ^{[1
]}

机构：

[1] Govt Holkar Sci Coll, Dept Phys, Indore 452001, Madhya Pradesh, India

[2] Indian Mil Acad, Army Cadet Coll, Dehra Dun 248007, UK, India

[3] UGC DAE Consortium Sci Res, Univ Campus,Khandwa Rd, Indore 452001, Madhya Pradesh, India

[4] Dr BR Ambedkar Natl Inst Technol Jalandhar Punjab, Dept Phys, Jalandhar, Punjab, India

来源：

PROF. DINESH VARSHNEY MEMORIAL NATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF MATERIALS (NCPCM 2018) | 2019年 / 2100卷

关键词：

FILMS; NIO;

D O I：

10.1063/1.5098725

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Non-stoichiometric nickel oxide was synthesized by solid state route method at different sintering temperatures upto 1100 degrees C. The structure of synthesized compounds were analyzed by X ray diffraction analysis (XRD) and the dielectric constant was found to different for samples of different stoichiometry. These results were interpreted as the decomposition temperature increases, which heals the defects present in the non-stoichiometric nickel oxide and loss peak shifts to the higher frequency which is due to long range hopping of charge carriers.

引用

页数：4

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