Perovskite Quantum Dots. A New Absorber for Perovskite-Perovskite Tandem Solar Cells

被引:0
作者
Christians, Jeffrey A. [1 ]
Marshall, Ashley R. [1 ]
Zhao, Qian [1 ,2 ]
Ndione, Paul [1 ]
Sanehira, Erin M. [1 ,3 ]
Luther, Joseph M. [1 ]
机构
[1] Natl Renewable Energy Lab, Golden, CO 80401 USA
[2] Nankai Univ, Coll Chem, Tianjin 300022, Peoples R China
[3] Univ Washington, Dept Elect Engn, Seattle, WA 98195 USA
来源
2018 IEEE 7TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION (WCPEC) (A JOINT CONFERENCE OF 45TH IEEE PVSC, 28TH PVSEC & 34TH EU PVSEC) | 2018年
基金
美国国家航空航天局;
关键词
halide perovskites; tandem photovoltaics; quantum dots; solar cells; LEAD HALIDE PEROVSKITES; STABILITY; NANOCRYSTALS; INTERFACES;
D O I
暂无
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
The nanoscale properties of CsPbI3 quantum dots allows for the advantageous manipulation of its phase diagram. We show that these all-inorganic halide perovskite nanocrystals can be used to fabricate colloidal perovskite quantum dot solar cells with low voltage losses. Despite only recently emerging on the photovoltaic scene, CsPbI3 quantum dot solar cells have already achieved approximately 85% of their Shockley-Quessier limit open-circuit voltage, among the lowest voltage loss achieved for any material with a band gap of 1.7 eV, excepting III-V semiconductors. The low losses in these devices recently led to a world record certified quantum dot solar cell efficiency of 13.4%. While single junction thin film perovskite solar cells have surpassed 22% power conversion efficiency, perovskite-perovskite tandem solar cells offer the potential for power conversion efficiencies exceeding 30%. However, to accomplish this ambitious goal, perovskite solar cells must be designed with low losses and the appropriate band gaps, which differ from the ideal band gap for single junction perovskite solar cells. In this respect, the incredibly low voltage loss and tunable band gap of CsPbI3 quantum dots make them ideally suited for all-perovskite tandem solar cell applications.
引用
收藏
页码:0081 / 0084
页数:4
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