Magneto-transport and electronic structures in MoSi2 bulks and thin films with different orientations

被引：5

作者：

Afzal, Wafa ^{[1
,3
]}

Yun, Frank Fei ^{[1
,3
]}

Li, Zhi ^{[1
,3
]}

Yue, Zengji ^{[1
,3
]}

Zhao, Weiyao ^{[1
,3
]}

Sang, Lina ^{[1
,3
]}

Yang, Guangsai ^{[1
]}

He, Yahua ^{[1
]}

Peleckis, Germanas ^{[1
]}

Fuhrer, Michael ^{[2
,3
]}

Wang, Xiaolin ^{[1
,3
]}

机构：

[1] Univ Wollongong, Australian Inst Innovat Mat AIIM, Inst Superconducting & Elect Mat ISEM, Squires Way, North Wollongong 2500, Australia

[2] Monash Univ, Australia Monash Ctr Atomically Thin Mat, Sch Phys & Astron, Clayton, Vic, Australia

[3] Australian Res Ctr ARC, Future Low Energy Elect Technol FLEET, Wollongong, NSW, Australia

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2021年 / 858卷

关键词：

MoSi2; Magnetoresistance; Surface states; Weak anti-localization; Spin-orbit coupling;

D O I：

10.1016/j.jallcom.2020.157670

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report a comprehensive study of magneto-transport properties in MoSi2 bulk and thin films. Textured MoSi2 thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi 2 single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperatures, the MR of the textured thin films show weak anti-localization behaviour owing to the spin orbit coupling effects. Our first principle calculation show the presence of surface states in this material. The resistivity of all the MoSi2 thin films is significantly low and nearly independent of the temperature, which is important for electronic devices. (C) 2020 Elsevier B.V. All rights reserved. (C) 2020 Elsevier B.V. All rights reserved.

引用

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