AlGaN/GaN High Electron-mobility Varactors on Silicon Substrate

被引：0

作者：

Amirpour, Raul ^{[1
]}

Schwantuschke, Dirk ^{[1
]}

Brueckner, Peter ^{[1
]}

Quay, Ruediger ^{[1
]}

Ambacher, Oliver ^{[1
,2
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys IAF, Tullastr 72, D-79108 Freiburg, Germany

[2] Univ Freiburg, Dept Sustainable Syst Engn INATECH, Emmy Noether Str 2, D-79110 Freiburg, Germany

来源：

2019 12TH GERMAN MICROWAVE CONFERENCE (GEMIC) | 2019年

关键词：

Gallium nitride (GaN); silicon (Si); GaN on Si; varactor; high electron-mobility varactor (HEMVAR);

D O I：

10.23919/gemic.2019.8698186

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper gives a first presentation of an AlGaN/GaN high electron-mobility varactor grown on a high resistivity silicon substrate. The technology is compared to a GaN on silicon carbide technology and the devices are characterized by fitting a large-signal model. Compared to GaN on SiC varactors a similar performance is achieved. Only slightly increased losses due to higher sheet and contact resistance lower the Q-factor of the GaN on Si varactor.

引用

页码：244 / 247

页数：4

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