2D MoS2/CuPc heterojunction based highly sensitive photodetectors through ultrafast charge transfer

被引:45
作者
Xu, Z. H. [1 ]
Tang, L. [2 ,3 ]
Zhang, S. W. [2 ,3 ]
Li, J. Z. [2 ,3 ,4 ]
Liu, B. L. [2 ,3 ]
Zhao, S. C. [1 ]
Yu, C. J. [5 ]
Wei, G. D. [2 ,3 ]
机构
[1] Hangzhou Dianzi Univ, Coll Mat & Environm Engn, Hangzhou 310018, Peoples R China
[2] Tsinghua Univ, Tsinghua Berkeley Shenzhen Inst TBSI, Shenzhen 518055, Peoples R China
[3] Tsinghua Univ, Tsinghua Shenzhen Int Grad Sch, Shenzhen 518055, Peoples R China
[4] Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou 310024, Peoples R China
[5] Univ Houston, Dept Mech Engn, Houston, TX 77004 USA
关键词
Monolayer MoS2; CuPc; Photodetector; Charge transfer; p-n junction; LAYER; PHOTOLUMINESCENCE; TRANSITION; MOBILITY;
D O I
10.1016/j.mtphys.2020.100273
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Photodetectors (PD) with high detectivity, high quantum efficiency and fast response are fundamental units to achieve sensors, imagers, and many others functional optoelectronics. Here we demonstrate high performance vertical stacked 2D MoS2/CuPc heterojunction based photodetectors with high sensitivity, high external quantum efficiency and ultrafast response time. The functional p-type organic thin film of CuPc was thermally evaporated on n-type two-dimension (2D) MoS2 monolayer to create an ideal type II heterojunction interface, where ultrafast charge transfer (CT) occur in 16 ps, followed by effective exciton separation and charge collection. As a result, photoresponse time as fast as 436 ms has been obtained for 2D MoS2/CuPc PDs, as well as a profound responsivity of 3:0 x 10(3)A/W and a detectivity of 2.0 x 10(10) Jones with a peak external quantum efficiency (EQE) of 483%. This work suggests a feasible route to develop ultrasensitive visible light photodetector by 2D materials. (c) 2020 Elsevier Ltd. All rights reserved.
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页数:6
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