102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

被引：55

作者：

Sun, Haifeng ^{[1
]}

Alt, Andreas R. ^{[1
]}

Benedickter, Hansruedi ^{[1
]}

Bolognesi, C. R. ^{[1
]}

Feltin, Eric ^{[2
]}

Carlin, Jean-Francois ^{[2
]}

Gonschorek, Marcus ^{[2
]}

Grandjean, Nicolas ^{[2
]}

Maier, Thomas ^{[3
]}

Quay, Ruediger ^{[3
]}

机构：

[1] ETH, Terahertz Elect Grp, Electromagnet Fields & Microwave Elect Lab, CH-8092 Zurich, Switzerland

[2] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

[3] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 08期

关键词：

GaN on Si; high-electron mobility transistor (HEMT); millimeter-wave transistors; GATE ALGAN/GAN HEMTS; PERFORMANCE;

D O I：

10.1109/LED.2009.2023603

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Grown on a (111) high-resistivity silicon substrate, 0.1-mu m gate AlInN/GaN high-electron mobility transistors (HEMTs) achieve a maximum current density of 1.3 A/mm, an extrinsic transconductance of 330 mS/mm, and a peak current gain cutoff frequency as high as f(T) = 102 GHz, which is the highest value reported so far for nitride-based devices on silicon substrates, as well as for any AlInN/GaN-based HEMT regardless of substrate type. Continuous-wave power measurements in class-A operation at 10 GHz with V-DS = 15 V revealed a 19-dB linear gain, a maximum output power density of 2.5 W/mm with an similar to 23% power-added efficiency (PAE), and a 9-dB large-signal gain. At VDS = 8 V, the output power is 1 W/mm, and the peak PAE reaches 50%. Results demonstrate the interest of AlInN/GaN on silicon HEMT technology for low-cost millimeter-wave and high-power applications.

引用

页码：796 / 798

页数：3

共 15 条

[1] AlGaN/GaN high electron mobility transistors on Si(111) substrates [J].

Chumbes, EM ;

Schremer, AT ;

Smart, JA ;

Yang, Y ;

MacDonald, NC ;

Hogue, D ;

Komiak, JJ ;

Lichwalla, SJ ;

Leoni, RE ;

Shealy, JR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (03) :420-426

[2] Cryogenic characteristics of sub-100-nm-gate AlGaN/GaN MIS-HEMTs [J].

Endoh, Akira ;

Watanabe, Issei ;

Yamashita, Yoshimi ;

Mimura, Takashi ;

Matsui, Toshiaki .

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6, 2008, 5 (06) :1917-+

[3]

GAQUIERE C, 2007, P IEEE MTT S INT MIC, P2145

[4]

HIGASHIWAKI M, 2008, P SPIE, V6894, P7

[5] RF power measurements of InAlN/GaN unstrained HEMTs on SiC substrates at 10 GHz [J].

Jessen, G. H. ;

Gillespie, J. K. ;

Via, G. D. ;

Crespo, A. ;

Langley, D. ;

Aumer, M. E. ;

Ward, C. S. ;

Henry, H. G. ;

Thomson, D. B. ;

Partlow, D. P. .

IEEE ELECTRON DEVICE LETTERS, 2007, 28 (05) :354-356

[6] Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-Gate devices [J].

Jessen, Gregg H. ;

Fitch, Robert C., Jr. ;

Gillespie, James K. ;

Via, Glen ;

Crespo, Antonio ;

Langley, Derrick ;

Denninghoff, Daniel J. ;

Trejo, Manuel, Jr. ;

Heller, Eric R. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (10) :2589-2597

[7] Power electronics on InAlN/(In)GaN:: Prospect for a record performance [J].

Kuzmík, J .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (11) :510-512

[8] Barrier-layer scaling of InAlN/GaN HEMTs [J].

Medjdoub, F. ;

Alomari, M. ;

Carlin, J. -F. ;

Gonschorek, M. ;

Feltin, E. ;

Py, M. A. ;

Grandjean, N. ;

Kohn, E. .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (05) :422-425

[9] Characteristics of Al2O3/AllnN/GaN MOSHEMT [J].

Medjdoub, F. ;

Sarazin, N. ;

Tordjman, M. ;

Magis, M. ;

di Forte-Poisson, M. A. ;

Knez, M. ;

Delos, E. ;

Gaquiere, C. ;

Delage, S. L. ;

Kohn, E. .

ELECTRONICS LETTERS, 2007, 43 (12) :691-692

[10] Small-signal characteristics of AlInN/GaN HEMTs [J].

Medjdoub, F. ;

Carlin, J. -F. ;

Gonschorek, M. ;

Py, M. A. ;

Grandjean, N. ;

Vandenbrouck, S. ;

Gaquiere, C. ;

Dejaeger, J. C. ;

Kohn, E. .

ELECTRONICS LETTERS, 2006, 42 (13) :779-780

← 1 2 →