Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode

被引：31
作者：
Chen, Huey-Ing [1 ]
Chuang, Kai-Chieh [2 ]
Chang, Ching-Hong [2 ]
Chen, Wei-Cheng [2 ]
Liu, I-Ping [1 ]
Liu, Wen-Chau [2 ]
机构：
[1] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Inst Microelect, Dept Elect Engn, 1 Univ Rd, Tainan 70101, Taiwan
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 2017年 / 246卷
关键词：
H2O2; treatment; AlGaOx; Hydrogen sensor; Sensing response; Schottky diode; PEROXIDE SURFACE-TREATMENT; MOS-HEMT; GAN; PERFORMANCE; TRANSISTOR; SENSORS; PD; MECHANISM; LAYERS; PD/GAN;
D O I：
10.1016/j.snb.2017.02.085
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Hydrogen sensing characteristics of a Pd/AlGaOx/AlGaN-based Schottky diode-type sensor are comprehensively studied. The AlGaOx dielectric layer is formed by an appropriate hydrogen peroxide (H2O2) treatment on the surface of the AIGaN layer. Experimentally, an extremely high hydrogen sensing response of 3.85 x 10(5) (under an introduced 1% H-2/air gas) and a very low detection limit of 1 ppm H-2/air gas are obtained at 300 K. This enhanced sensing performance is mainly caused by the effective dissociation of hydrogen molecules based on the presence of the AlGaOx layer. A response (recovery) time constant of 33(17) s is found upon exposure to 1% H-2/air gas at 300 K. The influence of humidity on the hydrogen sensing performance is studied in this work. Based on the improved properties, the studied device could serve as a candidate for high-performance hydrogen sensing applications. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码：408 / 414
页数：7
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