Gain dynamics and ultrafast spectral hole burning in In(Ga)As self-organized quantum dots

被引:42
作者
Kim, K
Urayama, J
Norris, TB
Singh, J
Phillips, J
Bhattacharya, P
机构
[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ctr Ultrafast Opt Sci, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA
关键词
D O I
10.1063/1.1493665
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using a femtosecond three-pulse pump-probe technique, we investigated spectral hole-burning and gain recovery dynamics in self-organized In(Ga)As quantum dots. The spectral hole dynamics are qualitatively different from those observed in quantum wells, and allow us to distinguish unambiguously the gain recovery due to intradot relaxation and that due to carrier capture. The gain recovery due to carrier-carrier scattering-dominated intradot relaxation is very fast (similar to130 fs), indicating that this is not the factor limiting the bandwidth of directly modulated quantum dot lasers. (C) 2002 American Institute of Physics.
引用
收藏
页码:670 / 672
页数:3
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