Layer-Stacking Growth and Electrical Transport of Hierarchical Graphene Architectures

被引:43
作者
Luo, Birong [1 ]
Chen, Bingyan [2 ,3 ]
Meng, Lan [4 ]
Geng, Dechao [1 ]
Liu, Hongtao [1 ]
Xu, Jie [1 ]
Zhang, Zhiyong [2 ,3 ]
Zhang, Hantang [1 ]
Peng, Lianmao [2 ,3 ]
He, Lin [4 ]
Hu, Wenping [1 ]
Liu, Yunqi [1 ]
Yu, Gui [1 ]
机构
[1] Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
[2] Peking Univ, Key Lab Phys & Chem Nanodevices, Beijing 100871, Peoples R China
[3] Peking Univ, Dept Elect, Beijing 100871, Peoples R China
[4] Beijing Normal Univ, Dept Phys, Beijing 100875, Peoples R China
基金
中国国家自然科学基金;
关键词
CHEMICAL-VAPOR-DEPOSITION; SINGLE-CRYSTAL GRAPHENE; BILAYER GRAPHENE; COPPER; TRANSISTORS; FRAMEWORKS; DOMAINS; BANDGAP;
D O I
10.1002/adma.201305627
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Hierarchical graphene architectures (HGAs) that grow by stacking of layers are produced on a liquid copper surface using chemical vapor deposition. The stacking mode - for example hexagonal-hexagonal-hexagonal or hexagonal-snowflake-dendritic - can be simply controlled. Measurements of the electrical properties of HGAs indicate that hierarchical stacking of graphene may be a simple and effective way of tailoring their properties without degrading them.
引用
收藏
页码:3218 / +
页数:8
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