Influence of indium and phosphine on Au-catalyzed InP nanowire growth on Si substrates

被引:19
|
作者
Boles, Steven T. [1 ]
Thompson, Carl V. [1 ]
Fitzgerald, Eugene A. [1 ]
机构
[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
基金
美国国家科学基金会;
关键词
Nanostructures; Metalorganic chemical vapor deposition; Phosphides; Semiconducting III-V materials; MOLECULAR-BEAM EPITAXY; SILICON; PRELAYERS; GAP; PH3;
D O I
10.1016/j.jcrysgro.2008.12.043
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The growth of InP nanowires by the VLS mechanism on Si <1 1 1> substrates with varying pre-growth treatments was investigated. When Au-catalyst particles were treated with trimethylindium before growth there was an increase in the fraction of catalyst particles yielding wire growth and in the number of these wires growing vertically from the substrate. This was confirmed using scanning electron microscopy, X-ray diffraction and energy dispersive X-ray spectroscopy. Cross-sectional transmission electron microscopy revealed that Au-catalyst particles exposed to PH(3) before growth did not alloy with the underlying Si substrate. InP wires were also grown using Ag catalyst particles which do not alloy with the Si substrate. However, wire growth does not appear to be inhibited in this case. These results suggest that P is the primary cause for the both lack of growth from some catalyst particles and growth in directions other than the vertical <1 1 1> direction of the substrate. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:1446 / 1450
页数:5
相关论文
共 50 条
  • [41] Self-catalyzed GaP nanowire MOVPE growth on Si
    Krug, David
    Glowatzki, Johannes
    Hueppe, Franziska
    Widemann, Maximilian
    Gruber, Felix
    Beyer, Andreas
    Volz, Kerstin
    JOURNAL OF CRYSTAL GROWTH, 2023, 609
  • [42] A diffusion-controlled kinetic model for growth of Au-catalyzed ZnO nanorods: Theory and experiment
    Hejazi, S. R.
    Hosseini, H. R. Madaah
    JOURNAL OF CRYSTAL GROWTH, 2007, 309 (01) : 70 - 75
  • [43] Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy
    Chiu-Yen Wang
    Yu-Chen Hong
    Zong-Jie Ko
    Ya-Wen Su
    Jin-Hua Huang
    Nanoscale Research Letters, 2017, 12
  • [44] Growth of InP layers on nanometer-scale patterned Si substrates
    Bakin, A
    Piester, D
    Behrens, I
    Wehmann, HH
    Peiner, E
    Ivanov, A
    Fehly, D
    Schlachetzki, A
    CRYSTAL GROWTH & DESIGN, 2003, 3 (01) : 89 - 93
  • [45] Selective Area Growth of InP and Defect Elimination on Si (001) Substrates
    Wang, Gang
    Leys, Maarten
    Loo, Roger
    Richard, Olivier
    Bender, Hugo
    Brammertz, Guy
    Waldron, Niamh
    Wang, Wei-E
    Dekoster, Johan
    Caymax, Matty
    Seefeldt, Marc
    Heyns, Marc
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (06) : H645 - H650
  • [46] Selective area growth of high quality InP on Si (001) substrates
    Wang, G.
    Leys, M. R.
    Loo, R.
    Richard, O.
    Bender, H.
    Waldron, N.
    Brammertz, G.
    Dekoster, J.
    Wang, W.
    Seefeldt, M.
    Caymax, M.
    Heyns, M. M.
    APPLIED PHYSICS LETTERS, 2010, 97 (12)
  • [47] Radial InP/InAsP/InP heterostructure nanowires on patterned Si substrates using self-catalyzed growth for vertical-type optical devices
    Kawaguchi, Kenichi
    Sudo, Hisao
    Matsuda, Manabu
    Takemoto, Kazuya
    Yamamoto, Tsuyoshi
    Arakawa, Yasuhiko
    APPLIED PHYSICS LETTERS, 2015, 106 (01)
  • [48] Indium Nanowire Growth on Si (001) Surface Using Density Functional Theory
    Kim, Dae-Hyun
    Kim, Dae-Hee
    Seo, Hwa-Il
    Kim, Yeong-Cheol
    KOREAN JOURNAL OF MATERIALS RESEARCH, 2009, 19 (03): : 137 - 141
  • [49] Size-dependent characteristics of indium-seeded Si nanowire growth
    Iacopi, F.
    Richard, O.
    Eichhammer, Y.
    Bender, H.
    Vereecken, P. M.
    De Gendt, S.
    Heyns, M.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (09) : K98 - K100
  • [50] The influence of stress on growth instabilities on Si substrates
    Lapena, L
    Berbezier, I
    Gallas, B
    Joyce, B
    THIN FILMS EPITAXIAL GROWTH AND NANOSTRUCTURES, 1999, 79 : 124 - 129