Enhanced THz radiation from femtosecond laser pulse irradiated InAs clean surface

被引：7
|
作者：
Ohtake, H [1 ]
Ono, S [1 ]
Liu, ZL [1 ]
Sarukura, N [1 ]
Ohta, M [1 ]
Watanabe, K [1 ]
Matsumoto, Y [1 ]
机构：
[1] Inst Mol Sci, Okazaki, Aichi 4448585, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 10B期
关键词：
THz radiation; InAs; clean surface;
D O I：
10.1143/JJAP.38.L1186
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A significant enhancement of THz radiation from an InAs clean (100) surface is observed with irradiation of femtosecond laser pulses at 50 K. Due to the surface cleaning and cooling temperature, the THz-radiation intensity from the InAs clean (100) surface at 50 K becomes to 10 times larger than that from an uncleaned surface at room temperature.
引用
收藏
页码：L1186 / L1187
页数：2
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