Self-assembly of Si nanostructures

被引：18

作者：

Zhu, YQ

Hsu, WK

Grobert, N

Terrones, M

Terrones, H

Kroto, HW

Walton, DRM ^{[1
]}

Wei, BQ

机构：

[1] Univ Sussex, Sch Chem Phys & Environm Sci, Brighton BN1 9QJ, E Sussex, England

[2] Tsing Hua Univ, Dept Engn Mech, Beijing 100084, Peoples R China

来源：

CHEMICAL PHYSICS LETTERS | 2000年 / 322卷 / 05期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1016/S0009-2614(00)00440-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Flower-like Si nanostructures are formed in high yield, by heating an SiO2 plate at ca. 1600 degrees C (Ta heater) under Ar (100 Torr). The product consists of metal-free cubic phase Si nanowires surmounted by bulbous Si tips. HRTEM observations show that the nanowires contain kink and twinning defects, whereas the tips are generally well-crystallized and covered with a thin layer of amorphous SiOx (x = 1-2). A growth model is proposed to account for these observations. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：312 / 320

页数：9

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