Self-assembly of Si nanostructures

被引：18
|
作者：
Zhu, YQ
Hsu, WK
Grobert, N
Terrones, M
Terrones, H
Kroto, HW
Walton, DRM [1 ]
Wei, BQ
机构：
[1] Univ Sussex, Sch Chem Phys & Environm Sci, Brighton BN1 9QJ, E Sussex, England
[2] Tsing Hua Univ, Dept Engn Mech, Beijing 100084, Peoples R China
来源：
CHEMICAL PHYSICS LETTERS | 2000年 / 322卷 / 05期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1016/S0009-2614(00)00440-1
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Flower-like Si nanostructures are formed in high yield, by heating an SiO2 plate at ca. 1600 degrees C (Ta heater) under Ar (100 Torr). The product consists of metal-free cubic phase Si nanowires surmounted by bulbous Si tips. HRTEM observations show that the nanowires contain kink and twinning defects, whereas the tips are generally well-crystallized and covered with a thin layer of amorphous SiOx (x = 1-2). A growth model is proposed to account for these observations. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：312 / 320
页数：9
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