Structure and photoluminescence properties of evaporated GeOx/SiO2 multilayers

被引:30
作者
Ardyanian, M. [1 ]
Rinnert, H. [1 ]
Vergnat, M. [1 ]
机构
[1] Nancy Univ, CNRS, UMR 7556, Phys Mat Lab, F-54506 Vandoeuvre Les Nancy, France
关键词
D O I
10.1063/1.2400090
中图分类号
O59 [应用物理学];
学科分类号
摘要
Amorphous GeOx/SiO2 multilayers were prepared by successive evaporations of GeO2 and SiO2 powders onto substrates maintained at 100 degrees C. The evolution of the structure was investigated by x-ray reflectometry, transmission electron microscopy, infrared-absorption spectrometry and Raman spectrometry for annealing temperatures less than 800 degrees C. These experiments allowed us to follow the phase decomposition of the GeOx alloy and to observe the appearance of amorphous and crystallized germanium aggregates. The evolution of the photoluminescence in the range of 0.8-2.2 eV was correlated to the structure of the films. (c) 2006 American Institute of Physics.
引用
收藏
页数:4
相关论文
共 17 条
[1]   Structure and photoluminescence properties of evaporated GeOx thin films [J].
Ardyanian, M. ;
Rinnert, H. ;
Devaux, X. ;
Vergnat, M. .
APPLIED PHYSICS LETTERS, 2006, 89 (01)
[2]   The formation of germanium nanocrystals by thermal annealing of a-SiOx:H/a-GeOx:H multilayers [J].
Freistedt, H ;
Stolze, F ;
Zacharias, M ;
Blasing, J ;
Drusedau, TP .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1996, 193 (02) :375-389
[3]   RAMAN, TRANSMISSION ELECTRON-MICROSCOPY, AND CONDUCTIVITY MEASUREMENTS IN MOLECULAR-BEAM DEPOSITED MICROCRYSTALLINE SI AND GE - A COMPARATIVE-STUDY [J].
GONZALEZHERNANDEZ, J ;
AZARBAYEJANI, GH ;
TSU, R ;
POLLAK, FH .
APPLIED PHYSICS LETTERS, 1985, 47 (12) :1350-1352
[4]   Fabrication and optical properties of Er-doped multilayers Si-rich SiO2/SiO2:: size control, optimum Er-Si coupling and interaction distance monitoring [J].
Gourbilleau, F ;
Madelon, R ;
Dufour, C ;
Rizk, R .
OPTICAL MATERIALS, 2005, 27 (05) :868-875
[5]  
IWAYAMA TS, 1994, J APPL PHYS, V75, P7779
[6]   Photoluminescence and electroluminescence of size-controlled silicon nanocrystallites embedded in SiO2 thin films -: art. no. 046105 [J].
Jambois, O ;
Rinnert, H ;
Devaux, X ;
Vergnat, M .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (04)
[7]   Origin of charge trapping in germanium nanocrystal embedded SiO2 system:: Role of interfacial traps? [J].
Kan, EWH ;
Choi, WK ;
Chim, WK ;
Fitzgerald, EA ;
Antoniadis, DA .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (06) :3148-3152
[8]   Simultaneous micro-Raman and photoluminescence study of spark-processed germanium: Report on the origin of the orange photoluminescence emission band [J].
Kartopu, G ;
Bayliss, SC ;
Hummel, RE ;
Ekinci, Y .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (07) :3466-3472
[9]   Strong violet-blue photoluminescence from Ge oxide films by magnetron sputtering [J].
Li, J ;
Wu, XL ;
Yang, YM ;
Yang, X ;
Bao, XM .
PHYSICS LETTERS A, 2003, 314 (04) :299-303
[10]   OXYGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED AMORPHOUS SILICON-HYDROGEN ALLOY-FILMS [J].
LUCOVSKY, G ;
YANG, J ;
CHAO, SS ;
TYLER, JE ;
CZUBATYJ, W .
PHYSICAL REVIEW B, 1983, 28 (06) :3225-3233