Flexible PEDOT:PSS/ZnO Schottky diodes on polyimide substrates

被引：11

作者：

Hernandez-Como, N. ^{[1
]}

Lopez-Castillo, M. ^{[2
]}

Hernandez-Cuevas, F. J. ^{[1
]}

Baez-Medina, H. ^{[3
]}

Baca-Arroyo, R. ^{[4
]}

Aleman, M. ^{[1
]}

机构：

[1] Inst Politecn Nacl, Ctr Nanociencias & Micro & Nanotecnol, Mexico City, DF, Mexico

[2] Inst Politecn Nacl, Escuela Super Ingn Quim & Ind Extract, Mexico City, DF, Mexico

[3] Inst Politecn Nacl, Ctr Invest Comp, Mexico City, DF, Mexico

[4] Inst Politecn Nacl, Escuela Super Ingn Mecan & Elect Zacatenco, Mexico City, DF, Mexico

来源：

MICROELECTRONIC ENGINEERING | 2019年 / 216卷

关键词：

Schottky diode; Flexible electronics; Photolithography; THIN; OXIDATION;

D O I：

10.1016/j.mee.2019.111060

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, we used a high work function polymer, PEDOT:PSS, as a Schottky contact in combination with ZnO as the n-type semiconductor. These lead to the formation of a Schottky diode in a flexible polyimide substrate. The flexible device was fabricated using four photolithography steps for further application in circuits with a maximum processing temperature of 300 degrees C. The electrical characteristics, J-V and C-V, were evaluated while performing several bending conditions. The bending radius used in this work were 4, 2 and 1 mm. The variation of the extracted electrical parameters (n, J(o), Von, phi(B), Rs, Ion/Ioff ratio, N-D, and V-bi) as a function of the bending radius is discussed.

引用

页数：4

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