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Low temperature deposition of boron-doped microcrystalline Si:H thin film and its application in silicon based thin film solar cells
被引:12
作者:
Tao, Ke
[1
]
Zhang, Dexian
[2
]
Zhao, Jingfang
[2
]
Wang, Linshen
[2
]
Cai, Hongkun
[2
]
Sun, Yun
[1
]
机构:
[1] Nankai Univ, Inst Photoelect Thin Film Devices & Tech, Tianjin, Peoples R China
[2] Nankai Univ, Dept Elect Sci & Technol, Tianjin, Peoples R China
关键词:
Amorphous semiconductors;
Silicon;
Solar cells;
Raman scattering;
X-ray diffraction;
Chemical vapor deposition;
Microcrystallinity;
WINDOW LAYERS;
PROTOCRYSTALLINE;
PRESSURE;
GAP;
D O I:
10.1016/j.jnoncrysol.2009.12.001
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
Boron-doped hydrogenated microcrystalline silicon thin films (p-mu c-Si:H) have been deposited by RF-PECVD method at different temperature, and the temperature dependence of growth kinetics and opto-electronic properties of p-mu c-Si:H thin films have been studied. Both the deposition rate and the dark-conductivity of the p-mu c-Si:H thin films drop down when the substrate temperature decreases. XRD and Raman measurements are used to characterize the micro-structure of p-mu c-Si:H thin films prepared at different substrate temperature. Grain size of p-mu c-Si:H thin films with different thickness as a function of substrate temperature has been investigated. Amorphous silicon thin film solar cells with p-i-n structures were fabricated on deposited boron doped mu c-Si:H layers. The best cells performance is obtained for p-layers processed at 90 degrees C. (C) 2009 Elsevier B.V. All rights reserved.
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页码:299 / 303
页数:5
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