Low temperature deposition of boron-doped microcrystalline Si:H thin film and its application in silicon based thin film solar cells

被引:12
作者
Tao, Ke [1 ]
Zhang, Dexian [2 ]
Zhao, Jingfang [2 ]
Wang, Linshen [2 ]
Cai, Hongkun [2 ]
Sun, Yun [1 ]
机构
[1] Nankai Univ, Inst Photoelect Thin Film Devices & Tech, Tianjin, Peoples R China
[2] Nankai Univ, Dept Elect Sci & Technol, Tianjin, Peoples R China
关键词
Amorphous semiconductors; Silicon; Solar cells; Raman scattering; X-ray diffraction; Chemical vapor deposition; Microcrystallinity; WINDOW LAYERS; PROTOCRYSTALLINE; PRESSURE; GAP;
D O I
10.1016/j.jnoncrysol.2009.12.001
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Boron-doped hydrogenated microcrystalline silicon thin films (p-mu c-Si:H) have been deposited by RF-PECVD method at different temperature, and the temperature dependence of growth kinetics and opto-electronic properties of p-mu c-Si:H thin films have been studied. Both the deposition rate and the dark-conductivity of the p-mu c-Si:H thin films drop down when the substrate temperature decreases. XRD and Raman measurements are used to characterize the micro-structure of p-mu c-Si:H thin films prepared at different substrate temperature. Grain size of p-mu c-Si:H thin films with different thickness as a function of substrate temperature has been investigated. Amorphous silicon thin film solar cells with p-i-n structures were fabricated on deposited boron doped mu c-Si:H layers. The best cells performance is obtained for p-layers processed at 90 degrees C. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:299 / 303
页数:5
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