Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates

被引：1

作者：

Gulseren, Melisa Ekin ^{[1
,2
]}

Bozok, Berkay ^{[1
,2
]}

Kurt, Gokhan ^{[2
]}

Kayal, Omer Ahmet ^{[2
]}

Ozturk, Mustafa ^{[2
]}

Ural, Sertac ^{[2
]}

Butun, Bayram ^{[2
]}

Ozbay, Ekmel ^{[1
,2
,3
,4
]}

机构：

[1] Bilkent Univ, Dept Elect & Elect Engn, TR-06800 Ankara, Turkey

[2] Bilkent Univ, Nanotechnol Res Ctr, TR-06800 Ankara, Turkey

[3] Bilkent Univ, UNAM Inst Mat Sci & Nanotechnol, TR-06800 Ankara, Turkey

[4] Bilkent Univ, Dept Phys, TR-06800 Ankara, Turkey

来源：

GALLIUM NITRIDE MATERIALS AND DEVICES XIV | 2019年 / 10918卷

关键词：

back-barrier; buffer leakage; GaN; high-electron-mobility transistors (HEMTs); InAlN; normally-off; p-GaN gate; INALN/ALN/GAN HEMTS; POWER ELECTRONICS; ALGAN/GAN HEMTS; DENSITY; VOLTAGE;

D O I：

10.1117/12.2507398

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer and one containing an AlGaN back-barrier, and the threshold voltage, drain current density, and buffer leakage current are compared. With the epitaxial structure containing a high resistive GaN layer, normally-off operation with a threshold voltage of +0.5 V is achieved. The threshold voltage is further increased to +2 V with the AlGaN back-barrier, and the buffer leakage current was improved by over an order of magnitude.

引用

页数：7

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