Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits

被引:15
|
作者
Bennett, Brian R. [1 ]
Ancona, Mario G. [1 ]
Champlain, James G. [1 ]
Papanicolaou, Nicolas A. [1 ]
Boos, J. Brad [1 ]
机构
[1] USN, Res Lab, Div Elect Sci & Technol, Washington, DC 20375 USA
关键词
Molecular beam epitaxy; Quantum wells; Semiconducting III-V materials; Field-effect transistors; High electron mobility transistors; FIELD-EFFECT TRANSISTORS; STRAINED-QUANTUM-WELL; P-CHANNEL; HIGH-SPEED; N-CHANNEL; HETEROSTRUCTURE; TECHNOLOGY; HFETS;
D O I
10.1016/j.jcrysgro.2009.09.047
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Heterostructures consisting of an InGaSb quantum well situated between AlGaSb barriers were grown by molecular beam epitaxy. Calculations indicate a type-I band structure with substantial valence and conduction band offsets that can allow for the confinement of either electrons or holes in the InGaSb. Quantum wells with n-type conduction were achieved using modulation doping, with Te located in the barrier above the quantum well. A set of barrier layers was found which resulted in a sample with an In(0.2)Ga(0.8)Sb quantum well that exhibited an electron mobility of 3900 cm(2)/V S as grown. After removal of upper barrier layers including the Te by selective etching, the conductivity switched to p-type, with hole mobilities near 800 cm(2)/Vs. This design could allow the integration of low-power n- and p-channel field-effect transistors for complementary logic applications. Published by Elsevier B.V.
引用
收藏
页码:37 / 40
页数:4
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