Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

被引：34

作者：

Amat, E. ^{[1
]}

Kauerauf, T. ^{[2
]}

Degraeve, R. ^{[2
]}

Rodriguez, R. ^{[1
]}

Nafria, M. ^{[1
]}

Aymerich, X. ^{[1
]}

Groeseneken, G. ^{[2
,3
]}

机构：

[1] UAB, Bellaterra 08193, Spain

[2] IMEC, B-3001 Louvain, Belgium

[3] Katholieke Univ Leuven, ESAT Dept, Leuven, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 01期

关键词：

Hot-carriers; Temperature; High-k; Reliability; DEPENDENCE;

D O I：

10.1016/j.mee.2009.05.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comparison between pMOS and nMOS short channel transistors with high-k dielectric subjected to channel hot-carrier (CHC) stress is presented. Smaller CHC degradation is observed in pMOS devices. At high temperature, the CHC degradation increases for pMOS and nMOS. The temperature dependence of the CHC degradation has been explained, for both transistor types, by considering a larger influence of a bias temperature instability (BTI)-related component of the total CHC induced degradation. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：47 / 50

页数：4

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