Fabrication of vertically aligned single-walled carbon nanotubes in atmospheric pressure non-thermal plasma CVD

被引:67
作者
Nozaki, Tomohiro
Ohnishi, Kuma
Okazaki, Ken
Kortshagen, Uwe
机构
[1] Tokyo Inst Technol, Dept Mech & Control Engn, Meguro Ku, Tokyo 1528552, Japan
[2] Univ Minnesota, Dept Mech Engn, Minneapolis, MN 55455 USA
关键词
D O I
10.1016/j.carbon.2006.09.009
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A fabrication technique of high-purity vertically aligned single-walled carbon nanotubes (VA-SWCNTs) using atmospheric pressure plasma enhanced chemical vapor deposition is presented. Although densely mono-dispersed Fe-Co catalysts of a few nanometers is primarily responsible for VA-SWCNT growth, carbon precipitation was virtually absent in the thermal CVD regime at 700 degrees C. On the other hand, high-purity VA-SWCNTs without measurable defects were grown at 4 pm min(-1) by applying atmospheric pressure radio-frequency discharge (APRFD) which has been previously developed for this purpose. The results proved that cathodic ion sheath adjacent to the substrates, where a large potential drop exists, also plays an essential role for the controlled growth of SWCNTs, while ion damage to the VA-SWCNTs is inherently avoided due to high collision frequency among molecules in atmospheric pressure. Operation regime of APRFD and tentative reaction mechanisms for VA-SWCNT growth are discussed along with optical emission spectroscopy of near substrate region. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:364 / 374
页数:11
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