Dopant distributions in n-MOSFET structure observed by atom probe tomography

被引：78

作者：

Inoue, K. ^{[1
]}

Yano, F. ^{[2
]}

Nishida, A. ^{[2
]}

Takamizawa, H. ^{[1
]}

Tsunomura, T. ^{[2
]}

Nagai, Y. ^{[1
]}

Hasegawa, M. ^{[3
,4
]}

机构：

[1] Tohoku Univ, Oarai Ctr, Inst Mat Res, Oarai, Ibaraki 3111313, Japan

[2] MIRAI Selete, Tsukuba, Ibaraki 3058569, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[4] Tohoku Univ, Ctr Cyclotron & Radioisotope, Sendai, Miyagi 9808578, Japan

来源：

ULTRAMICROSCOPY | 2009年 / 109卷 / 12期

关键词：

Atom probe tomography; Dopant distribution; MOSFET; SPECIMEN PREPARATION;

D O I：

10.1016/j.ultramic.2009.08.002

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The dopant distributions in an n-type metal-oxide-semiconductor field effect transistor (MOSFET) structure were analyzed by atom probe tomography. The dopant distributions of As, P, and B atoms in a MOSFET structure (gate, gate oxide, channel, source/drain extension, and halo) were obtained. P atoms were segregated at the interface between the poly-Si gate and the gate oxide, and on the grain boundaries of the poly-Si gate, which had an elongated grain structure along the gate height direction. The concentration of B atoms was enriched near the edge of the source/drain extension where the As atoms were implanted. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1479 / 1484

页数：6

共 12 条

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